Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes

Shingo Ono; Riadh El Ouenzerfi; Alex Quema; Hidetoshi Murakami; Nobuhiko Sarukura; Takeshi Nishimatsu; Noriaki Terakubo; Hiroshi Mizuseki; Yoshiyuki Kawazoe; Akira Yoshikawa; Tsuguo Fukuda

doi:10.1143/JJAP.44.7285

Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes

Shingo Ono, Riadh El Ouenzerfi, Alex Quema, Hidetoshi Murakami, Nobuhiko Sarukura, Takeshi Nishimatsu, Noriaki Terakubo, Hiroshi Mizuseki, Yoshiyuki Kawazoe, Akira Yoshikawa, Tsuguo Fukuda

Materials Design Division

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The design principle for fluoride-containing optical devices for applications in the deep ultraviolet range is discussed. Variations in band gap energy, band structure and lattice constant of LiBa_xCa _ySr(_1-X-y)F₃ and Li(_1-x)K _xBa(_1-yMg_yF₃ have been studied. The band structure and transition type of these fluorides are predicted by ab initia band calculations based on the local density approximation. The lattice-matched double-hetero structure of direct-band-gap compounds LiBa_xCa _ySr(_1-x-y)F3 on LiSrF₃ and Li( _1-X)K_xBa(_1-y)Mg_yF₃ on either LiBaFj or KMgFj is sufficiently feasible to fabricate.

Original language	English
Pages (from-to)	7285-7290
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7285
Publication status	Published - 2005 Oct 11

Keywords

Band structure
Lattice-matched double-heterostructure
Light-emitting diode
Perovskite fluorides
Ultraviolet laser diode

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.7285

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Ono, S., El Ouenzerfi, R., Quema, A., Murakami, H., Sarukura, N., Nishimatsu, T., Terakubo, N., Mizuseki, H., Kawazoe, Y., Yoshikawa, A., & Fukuda, T. (2005). Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(10), 7285-7290. https://doi.org/10.1143/JJAP.44.7285

Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes. / Ono, Shingo; El Ouenzerfi, Riadh; Quema, Alex; Murakami, Hidetoshi; Sarukura, Nobuhiko; Nishimatsu, Takeshi; Terakubo, Noriaki; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki; Yoshikawa, Akira; Fukuda, Tsuguo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 10, 11.10.2005, p. 7285-7290.

Research output: Contribution to journal › Article › peer-review

Ono, S, El Ouenzerfi, R, Quema, A, Murakami, H, Sarukura, N, Nishimatsu, T, Terakubo, N, Mizuseki, H, Kawazoe, Y, Yoshikawa, A & Fukuda, T 2005, 'Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 44, no. 10, pp. 7285-7290. https://doi.org/10.1143/JJAP.44.7285

Ono, Shingo ; El Ouenzerfi, Riadh ; Quema, Alex ; Murakami, Hidetoshi ; Sarukura, Nobuhiko ; Nishimatsu, Takeshi ; Terakubo, Noriaki ; Mizuseki, Hiroshi ; Kawazoe, Yoshiyuki ; Yoshikawa, Akira ; Fukuda, Tsuguo. / Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 10. pp. 7285-7290.

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abstract = "The design principle for fluoride-containing optical devices for applications in the deep ultraviolet range is discussed. Variations in band gap energy, band structure and lattice constant of LiBaxCa ySr(1-X-y)F3 and Li(1-x)K xBa(1-yMgyF3 have been studied. The band structure and transition type of these fluorides are predicted by ab initia band calculations based on the local density approximation. The lattice-matched double-hetero structure of direct-band-gap compounds LiBaxCa ySr(1-x-y)F3 on LiSrF3 and Li( 1-X)KxBa(1-y)MgyF3 on either LiBaFj or KMgFj is sufficiently feasible to fabricate.",

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AB - The design principle for fluoride-containing optical devices for applications in the deep ultraviolet range is discussed. Variations in band gap energy, band structure and lattice constant of LiBaxCa ySr(1-X-y)F3 and Li(1-x)K xBa(1-yMgyF3 have been studied. The band structure and transition type of these fluorides are predicted by ab initia band calculations based on the local density approximation. The lattice-matched double-hetero structure of direct-band-gap compounds LiBaxCa ySr(1-x-y)F3 on LiSrF3 and Li( 1-X)KxBa(1-y)MgyF3 on either LiBaFj or KMgFj is sufficiently feasible to fabricate.

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Band-structure design of fluoride complex materials for deep-ultraviolet light-emitting diodes

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Keywords

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