Band structure and Fermi surface of URu2Si2 studied by high-resolution angle-resolved photoemission spectroscopy

T. Ito, H. Kumigashira, T. Takahashi, Y. Haga, E. Yamamoto, T. Honma, H. Ohkuni, Y. Onuki

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We have performed a high-resolution angle-resolved photoemission spectroscopy (ARPES) on single-crystal URu2Si2 to study the band structure and the Fermi surface in the paramagnetic phase. The valence-band structure consisting of the Ru 4d and Si 3p states shows a qualitatively good agreement between the ARPES experiment and the band-structure calculation. In the vicinity of the Fermi level (EF), we observed a less dispersive band, which crosses EF midway between the Z and X points in the Brillouin zone. Comparison with the band calculation as well as with the de Haas-van Alphen (dHvA) result suggests that the experimental band near EF is assigned to the largest hole pocket centered at the Z point, which has a strong U 5f-Ru4d hybridized character. The observed remarkable narrowing of the near-EF band compared with the band-structure calculation suggests a strong renormalization effect due to the electron correlation of U 5f electrons.

Original languageEnglish
Pages (from-to)13390-13395
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number19
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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