Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

M. Oshima, H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Inoue, M. Mizutani, J. Yugami

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N is can be correlated with electron trapping. Photoelectron spectra and O k-edge absorption spectra confirm the existence of the SiO2-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO2-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.

Original languageEnglish
Article number033709
JournalJournal of Applied Physics
Volume100
Issue number3
DOIs
Publication statusPublished - 2006 Aug 25
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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