Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition

Shigefusa Chichibu, M. Arita, H. Nakanishi, J. Nishio, L. Sugiura, Y. Kokubun, K. Itaya

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14 Citations (Scopus)

Abstract

Two energetically-separated resonance structures were found in photoreflectance (PR) spectra of three-dimensional InxGa 1-xN epilayers (0.05≤x≤0.2) grown by metalorganic chemical vapor deposition. Energy difference between the two structures was nearly constant about 50 meV for all x examined. The broadening parameter of each structure was nearly independent of x (∼50 meV), indicating that each separated region has rather homogeneous net potential fluctuation. The photoluminescence (PL) peak energy agreed with the resonance energy of the lower-energy PR structure, showing nearly zero Stokes-like shift at room temperature. Observation of a single PL peak indicated that photoexcited carriers were effectively corrected into the separated regions having lower PR resonance energy.

Original languageEnglish
Pages (from-to)2860-2862
Number of pages3
JournalJournal of Applied Physics
Volume83
Issue number5
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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