Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

Y. Enta, Y. Takegawa, D. Shoji, M. Suemitsu, Y. Takakuwa, H. Kato, N. Miyamoto

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The photoelectron intensities from the surface states on Si(100) periodically oscillate during Si growth and that oscillation is associated with the alternation between the 2×1 and the 1×2 surface reconstructions [Y. Enta et al., Surf. Sci. 313(1994)L797]. For clarifying the origin of the oscillation in more detail, angle-resolved-ultraviolet-photoelectron-spectroscopy measurements for both Si(100)2×1 and 1×2 clean surfaces have been performed. As a result, it was found that the photoelectron intensity oscillations on Si(100) arise from the difference in the surface band dispersions between the 2×1 and the 1×2 clean surfaces.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 1996 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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