Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy

J. Okabayashi; K. Ono; T. Mano; M. Mizuguchi; K. Horiba; K. Nakamura; A. Fujimori; M. Oshima

doi:10.1063/1.1455695

Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy

J. Okabayashi, K. Ono, T. Mano, M. Mizuguchi, K. Horiba, K. Nakamura, A. Fujimori, M. Oshima

Research output: Contribution to journal › Article › peer-review

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Abstract

In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is atomically abrupt, the electronic structure in the interface region displays Al_1-xGa_xAs alloy-like behaviors. The valence-band maximum as well as the Ga 3d core level show a gradual shift as a function of GaAs layer thickness of less than 2 nm (8 monolayers), which indicates that interface formation needs about 2 nm thickness for the electronic structure of the GaAs layer to become that of bulk GaAs.

Original language	English
Pages (from-to)	1764-1766
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	10
DOIs	https://doi.org/10.1063/1.1455695
Publication status	Published - 2002 Mar 11
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy",

abstract = "In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is atomically abrupt, the electronic structure in the interface region displays Al1-xGaxAs alloy-like behaviors. The valence-band maximum as well as the Ga 3d core level show a gradual shift as a function of GaAs layer thickness of less than 2 nm (8 monolayers), which indicates that interface formation needs about 2 nm thickness for the electronic structure of the GaAs layer to become that of bulk GaAs.",

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AU - Okabayashi, J.

AU - Ono, K.

AU - Mano, T.

AU - Mizuguchi, M.

AU - Horiba, K.

AU - Nakamura, K.

AU - Fujimori, A.

AU - Oshima, M.

PY - 2002/3/11

Y1 - 2002/3/11

N2 - In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is atomically abrupt, the electronic structure in the interface region displays Al1-xGaxAs alloy-like behaviors. The valence-band maximum as well as the Ga 3d core level show a gradual shift as a function of GaAs layer thickness of less than 2 nm (8 monolayers), which indicates that interface formation needs about 2 nm thickness for the electronic structure of the GaAs layer to become that of bulk GaAs.

AB - In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is atomically abrupt, the electronic structure in the interface region displays Al1-xGaxAs alloy-like behaviors. The valence-band maximum as well as the Ga 3d core level show a gradual shift as a function of GaAs layer thickness of less than 2 nm (8 monolayers), which indicates that interface formation needs about 2 nm thickness for the electronic structure of the GaAs layer to become that of bulk GaAs.

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Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy

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