Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy

J. Okabayashi, K. Ono, T. Mano, M. Mizuguchi, K. Horiba, K. Nakamura, A. Fujimori, M. Oshima

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is atomically abrupt, the electronic structure in the interface region displays Al1-xGaxAs alloy-like behaviors. The valence-band maximum as well as the Ga 3d core level show a gradual shift as a function of GaAs layer thickness of less than 2 nm (8 monolayers), which indicates that interface formation needs about 2 nm thickness for the electronic structure of the GaAs layer to become that of bulk GaAs.

Original languageEnglish
Pages (from-to)1764-1766
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number10
DOIs
Publication statusPublished - 2002 Mar 11
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this