Band diagrams of spin tunneling junctions la0.6Sr 0.4MnO3/Nb:SrTiO3 and SrRuO3/Nb: SrTiO3 determined by in situ photoemission spectroscopy

M. Minohara, I. Ohkubo, H. Kumigashira, M. Oshima

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Abstract

The authors report on the band diagram for epitaxial Schottky junctions of ferromagnetic metallic oxides [half-metallic ferromagnet La0.6Sr 0.4MnO3 (LSMO) and itinerant ferromagnet SrRuO3 (SRO)] on Nb-doped SrTiO3 (Nb:STO) semiconductor substrates using in situ photoemission spectroscopy. The ideal Schottky barrier is formed in SRO/Nb:STO junctions with Schottky barrier height (SBH) of 1.2±0.1 eV, while the measured SBH of LSMO/Nb:STO (1.2±0.1 eV) is much larger than the prediction from the Schottky-Mott rule (0.7±0.1 eV). These results suggest that a certain interface dipole is formed at the LSMO/Nb:STO interface.

Original languageEnglish
Article number132123
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
Publication statusPublished - 2007 Apr 8
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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