The authors report on the band diagram for epitaxial Schottky junctions of ferromagnetic metallic oxides [half-metallic ferromagnet La0.6Sr 0.4MnO3 (LSMO) and itinerant ferromagnet SrRuO3 (SRO)] on Nb-doped SrTiO3 (Nb:STO) semiconductor substrates using in situ photoemission spectroscopy. The ideal Schottky barrier is formed in SRO/Nb:STO junctions with Schottky barrier height (SBH) of 1.2±0.1 eV, while the measured SBH of LSMO/Nb:STO (1.2±0.1 eV) is much larger than the prediction from the Schottky-Mott rule (0.7±0.1 eV). These results suggest that a certain interface dipole is formed at the LSMO/Nb:STO interface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)