Band bending measurement of HfO 2 /SiO 2 /Si capacitor with ultra-thin La 2 O 3 insertion by XPS

K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The flat band voltage shifts of HfO 2 /SiO 2 /nSi capacitors with ultra-thin La 2 O 3 insertion at HfO 2 /SiO 2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La 2 O 3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO 2 and La 2 O 3 at SiO 2 interface can be estimated to be 0.40 V.

Original languageEnglish
Pages (from-to)6106-6108
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30
Externally publishedYes

Keywords

  • Flat band voltage
  • Hard X-ray photoemission spectroscopy (HX-PES)
  • High-k

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Band bending measurement of HfO <sub>2</sub> /SiO <sub>2</sub> /Si capacitor with ultra-thin La <sub>2</sub> O <sub>3</sub> insertion by XPS'. Together they form a unique fingerprint.

Cite this