Band bending measurement of HfO                         2                         /SiO                         2                         /Si capacitor with ultra-thin La                         2                         O                         3                          insertion by XPS

K. Kakushima; K. Okamoto; M. Adachi; K. Tachi; J. Song; S. Sato; T. Kawanago; P. Ahmet; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1016/j.apsusc.2008.02.177

Band bending measurement of HfO ₂ /SiO ₂ /Si capacitor with ultra-thin La ₂ O ₃ insertion by XPS

K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The flat band voltage shifts of HfO ₂ /SiO ₂ /nSi capacitors with ultra-thin La ₂ O ₃ insertion at HfO ₂ /SiO ₂ interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La ₂ O ₃ insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO ₂ and La ₂ O ₃ at SiO ₂ interface can be estimated to be 0.40 V.

Original language	English
Pages (from-to)	6106-6108
Number of pages	3
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.177
Publication status	Published - 2008 Jul 30
Externally published	Yes

Keywords

Flat band voltage
Hard X-ray photoemission spectroscopy (HX-PES)
High-k

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2008.02.177

Cite this

Kakushima, K., Okamoto, K., Adachi, M., Tachi, K., Song, J., Sato, S., Kawanago, T., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2008). Band bending measurement of HfO ₂ /SiO ₂ /Si capacitor with ultra-thin La ₂ O ₃ insertion by XPS Applied Surface Science, 254(19), 6106-6108. https://doi.org/10.1016/j.apsusc.2008.02.177

Band bending measurement of HfO ₂ /SiO ₂ /Si capacitor with ultra-thin La ₂ O ₃ insertion by XPS . / Kakushima, K.; Okamoto, K.; Adachi, M. et al.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6106-6108.

Research output: Contribution to journal › Article › peer-review

Kakushima, K, Okamoto, K, Adachi, M, Tachi, K, Song, J, Sato, S, Kawanago, T, Ahmet, P, Tsutsui, K, Sugii, N, Hattori, T & Iwai, H 2008, ' Band bending measurement of HfO ₂ /SiO ₂ /Si capacitor with ultra-thin La ₂ O ₃ insertion by XPS ', Applied Surface Science, vol. 254, no. 19, pp. 6106-6108. https://doi.org/10.1016/j.apsusc.2008.02.177

Kakushima K, Okamoto K, Adachi M, Tachi K, Song J, Sato S et al. Band bending measurement of HfO ₂ /SiO ₂ /Si capacitor with ultra-thin La ₂ O ₃ insertion by XPS Applied Surface Science. 2008 Jul 30;254(19):6106-6108. doi: 10.1016/j.apsusc.2008.02.177

Kakushima, K. ; Okamoto, K. ; Adachi, M. et al. / Band bending measurement of HfO ₂ /SiO ₂ /Si capacitor with ultra-thin La ₂ O ₃ insertion by XPS In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6106-6108.

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title = " Band bending measurement of HfO 2 /SiO 2 /Si capacitor with ultra-thin La 2 O 3 insertion by XPS ",

abstract = " The flat band voltage shifts of HfO 2 /SiO 2 /nSi capacitors with ultra-thin La 2 O 3 insertion at HfO 2 /SiO 2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La 2 O 3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO 2 and La 2 O 3 at SiO 2 interface can be estimated to be 0.40 V.",

keywords = "Flat band voltage, Hard X-ray photoemission spectroscopy (HX-PES), High-k",

author = "K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and J. Song and S. Sato and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai",

note = "Funding Information: The authors would like to express sincere thanks to H. Nohira with Musashi Institute of Technology and E. Ikenaga with JASRI/SPring-8. The synchrotron radiation experiments were performed at the BL47XU in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No. 2007A0005). This work is partially supported by NEDO.",

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AU - Kakushima, K.

AU - Okamoto, K.

AU - Adachi, M.

AU - Tachi, K.

AU - Song, J.

AU - Sato, S.

AU - Kawanago, T.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Hattori, T.

AU - Iwai, H.

N1 - Funding Information: The authors would like to express sincere thanks to H. Nohira with Musashi Institute of Technology and E. Ikenaga with JASRI/SPring-8. The synchrotron radiation experiments were performed at the BL47XU in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No. 2007A0005). This work is partially supported by NEDO.

PY - 2008/7/30

Y1 - 2008/7/30

N2 - The flat band voltage shifts of HfO 2 /SiO 2 /nSi capacitors with ultra-thin La 2 O 3 insertion at HfO 2 /SiO 2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La 2 O 3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO 2 and La 2 O 3 at SiO 2 interface can be estimated to be 0.40 V.

AB - The flat band voltage shifts of HfO 2 /SiO 2 /nSi capacitors with ultra-thin La 2 O 3 insertion at HfO 2 /SiO 2 interface have been confirmed using hard X-ray photoelectron spectroscopy (HX-PES). By increasing the amount of La 2 O 3 insertion, the binding energy of Si 1s core spectra increases, which means that the surface potential of Si substrate also increases. A voltage drop difference of HfO 2 and La 2 O 3 at SiO 2 interface can be estimated to be 0.40 V.

KW - Flat band voltage

KW - Hard X-ray photoemission spectroscopy (HX-PES)

KW - High-k

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