Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard x-ray photoelectron spectroscopy

Ryota Takabe, Hiroki Takeuchi, Weijie Du, Keita Ito, Kaoru Toko, Shigenori Ueda, Akio Kimura, Takashi Suemasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated native oxide/BaSi2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi2 capped with the a-Si layer.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2826-2829
Number of pages4
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 2016 Nov 18
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 2016 Jun 52016 Jun 10

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period16/6/516/6/10

Keywords

  • hard x-ray photoelectron spectroscopy
  • molecular beam epitaxy
  • silicide
  • surface passivation
  • thin-film solar cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Takabe, R., Takeuchi, H., Du, W., Ito, K., Toko, K., Ueda, S., Kimura, A., & Suemasu, T. (2016). Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard x-ray photoelectron spectroscopy. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2826-2829). [7750168] (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750168