Band alignments at native oxide/BaSi 2 and amorphous-Si/BaSi 2 interfaces measured by hard X-ray photoelectron spectroscopy

Ryota Takabe, Hiroki Takeuchi, Weijie Du, Keita Ito, Kaoru Toko, Shigenori Ueda, Akio Kimura, Takashi Suemasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated native oxide/BaSi 2 and amorphous Si(a-Si, 5 nm) structures on n-Si(111) by molecular beam epitaxy and evaluated the band alignments at the interfaces by x-ray photoelectron spectroscopy in order to understand the carrier transport properties. We found that the potential barrier height of the native oxide for the minority-carriers, holes, in n-BaSi 2 is approximately 3.9 eV, whereas that of a-Si is approximately -0.2 eV. These results mean that a-Si layer is superior to the native oxide from the viewpoint of hole transport. Thanks to these band alignment, the photoresponsivity was drastically improved for the BaSi 2 capped with the a-Si layer.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 2017 Jan 1
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 2017 Jun 252017 Jun 30

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period17/6/2517/6/30

Keywords

  • Hard x-ray photoelectron spectroscopy
  • Molecular beam epitaxy
  • Silicide
  • Surface passivation
  • Thin-film solar cells

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Takabe, R., Takeuchi, H., Du, W., Ito, K., Toko, K., Ueda, S., Kimura, A., & Suemasu, T. (2017). Band alignments at native oxide/BaSi 2 and amorphous-Si/BaSi 2 interfaces measured by hard X-ray photoelectron spectroscopy In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366660