Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Dares Kaewket; Sakuntam Sanorpim; Sukkaneste Tungasmita; Ryuji Katayama; Kentaro Onabe

doi:10.1016/j.physe.2009.11.125

Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The band alignment of nearly lattice-matched In_0.528Ga_0.472P_1-yN_y/GaAs and GaAs/In_0.528Ga_0.472P_1-yN_y quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (E_PL,QW) in the infrared region which related to sample's structures. For GaAs/In_0.528Ga_0.472P_0.973N _0.027 QW, the E_PL,QW emission was observed at temperature up to 260 K. The results reveal that the In_0.528Ga_0.472P_0.973N_0.027/G aAs and GaAs/In_0.528Ga_0.472P_0.973N _0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔE_V as large as 450 meV was estimated for GaAs/In_0.528Ga_0.472P _0.973N_0.027 quantum well while the conduction band offset ΔE_C was estimated to be 160 meV for In_0.528Ga_0.472P_0.973N_0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between In_xGa_1-xP_1-yN_y (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.

Original language	English
Pages (from-to)	1176-1179
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	4
DOIs	https://doi.org/10.1016/j.physe.2009.11.125
Publication status	Published - 2010 Feb 1

Keywords

Band alignment
InGaPN
MOVPE
Quantum well
Type-II

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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@article{cbb33e2973804b6591aa56d3fac8cc9d,

title = "Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE",

abstract = "The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.",

keywords = "Band alignment, InGaPN, MOVPE, Quantum well, Type-II",

author = "Dares Kaewket and Sakuntam Sanorpim and Sukkaneste Tungasmita and Ryuji Katayama and Kentaro Onabe",

year = "2010",

month = feb,

day = "1",

doi = "10.1016/j.physe.2009.11.125",

language = "English",

volume = "42",

pages = "1176--1179",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

AU - Kaewket, Dares

AU - Sanorpim, Sakuntam

AU - Tungasmita, Sukkaneste

AU - Katayama, Ryuji

AU - Onabe, Kentaro

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.

AB - The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.

KW - Band alignment

KW - InGaPN

KW - MOVPE

KW - Quantum well

KW - Type-II

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U2 - 10.1016/j.physe.2009.11.125

DO - 10.1016/j.physe.2009.11.125

M3 - Article

AN - SCOPUS:77249103474

VL - 42

SP - 1176

EP - 1179

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 4

ER -

Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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