Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Dares Kaewket; Sakuntam Sanorpim; Sukkaneste Tungasmita; Ryuji Katayama; Kentaro Onabe

doi:10.1016/j.physe.2009.11.125

Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The band alignment of nearly lattice-matched In_0.528Ga_0.472P_1-yN_y/GaAs and GaAs/In_0.528Ga_0.472P_1-yN_y quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (E_PL,QW) in the infrared region which related to sample's structures. For GaAs/In_0.528Ga_0.472P_0.973N _0.027 QW, the E_PL,QW emission was observed at temperature up to 260 K. The results reveal that the In_0.528Ga_0.472P_0.973N_0.027/G aAs and GaAs/In_0.528Ga_0.472P_0.973N _0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔE_V as large as 450 meV was estimated for GaAs/In_0.528Ga_0.472P _0.973N_0.027 quantum well while the conduction band offset ΔE_C was estimated to be 160 meV for In_0.528Ga_0.472P_0.973N_0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between In_xGa_1-xP_1-yN_y (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.

Original language	English
Pages (from-to)	1176-1179
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	4
DOIs	https://doi.org/10.1016/j.physe.2009.11.125
Publication status	Published - 2010 Feb 1

Keywords

Band alignment
InGaPN
MOVPE
Quantum well
Type-II

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.physe.2009.11.125

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@article{cbb33e2973804b6591aa56d3fac8cc9d,

title = "Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE",

abstract = "The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.",

keywords = "Band alignment, InGaPN, MOVPE, Quantum well, Type-II",

author = "Dares Kaewket and Sakuntam Sanorpim and Sukkaneste Tungasmita and Ryuji Katayama and Kentaro Onabe",

year = "2010",

month = feb,

day = "1",

doi = "10.1016/j.physe.2009.11.125",

language = "English",

volume = "42",

pages = "1176--1179",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

AU - Kaewket, Dares

AU - Sanorpim, Sakuntam

AU - Tungasmita, Sukkaneste

AU - Katayama, Ryuji

AU - Onabe, Kentaro

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.

AB - The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.

KW - Band alignment

KW - InGaPN

KW - MOVPE

KW - Quantum well

KW - Type-II

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U2 - 10.1016/j.physe.2009.11.125

DO - 10.1016/j.physe.2009.11.125

M3 - Article

AN - SCOPUS:77249103474

VL - 42

SP - 1176

EP - 1179

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 4

ER -

Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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