Abstract
The band alignment of nearly lattice-matched In0.528Ga0.472P1-yNy/GaAs and GaAs/In0.528Ga0.472P1-yNy quantum wells with N content of y=0.027 on GaAs (0 0 1) substrates grown by metalorganic vapor phase epitaxy were studied using low-temperature and temperature dependent photoluminescence (PL). Low temperature (10 K) PL shows the emission (EPL,QW) in the infrared region which related to sample's structures. For GaAs/In0.528Ga0.472P0.973N 0.027 QW, the EPL,QW emission was observed at temperature up to 260 K. The results reveal that the In0.528Ga0.472P0.973N0.027/G aAs and GaAs/In0.528Ga0.472P0.973N 0.027 quantum wells exhibit a type-II quantum structure. Valence band offset ΔEV as large as 450 meV was estimated for GaAs/In0.528Ga0.472P 0.973N0.027 quantum well while the conduction band offset ΔEC was estimated to be 160 meV for In0.528Ga0.472P0.973N0.027/G aAs quantum well. This type-II quantum structures refer to the natural type-II band alignment between InxGa1-xP1-yNy (x=0.528, y=0.027) and GaAs, which is useful for separation electrons and holes in the electronic and photovoltaic applications.
Original language | English |
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Pages (from-to) | 1176-1179 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 42 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 Feb 1 |
Keywords
- Band alignment
- InGaPN
- MOVPE
- Quantum well
- Type-II
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics