Band alignment at β -(AlxGa1- x)2O3/ β -Ga2O3 (100) interface fabricated by pulsed-laser deposition

Ryo Wakabayashi, Mai Hattori, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

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45 Citations (Scopus)


High-quality β-(AlxGa1- x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1- x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.

Original languageEnglish
Article number232103
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2018 Jun 4
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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