Ballistic transport in InSb quantum wells at high temperature

N. Goel; S. J. Chung; M. B. Santos; K. Suzuki; S. Miyashita; Y. Hirayama

doi:10.1016/j.physe.2003.08.012

Ballistic transport in InSb quantum wells at high temperature

N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al_0.15In_0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.

Original language	English
Pages (from-to)	251-254
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.012
Publication status	Published - 2004 Jan 1
Externally published	Yes
Event	Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: 2003 Jun 16 → 2003 Jun 20

Keywords

Ballistic transport
InSb quantum wells
Molecular beam epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.physe.2003.08.012

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title = "Ballistic transport in InSb quantum wells at high temperature",

abstract = "Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.",

keywords = "Ballistic transport, InSb quantum wells, Molecular beam epitaxy",

author = "N. Goel and Chung, {S. J.} and Santos, {M. B.} and K. Suzuki and S. Miyashita and Y. Hirayama",

year = "2004",

month = jan,

day = "1",

doi = "10.1016/j.physe.2003.08.012",

language = "English",

volume = "20",

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journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3-4",

note = "Proceedings of the 11th International Conference on Narrow Gap ; Conference date: 16-06-2003 Through 20-06-2003",

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TY - JOUR

T1 - Ballistic transport in InSb quantum wells at high temperature

AU - Goel, N.

AU - Chung, S. J.

AU - Santos, M. B.

AU - Suzuki, K.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.

AB - Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.

KW - Ballistic transport

KW - InSb quantum wells

KW - Molecular beam epitaxy

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U2 - 10.1016/j.physe.2003.08.012

DO - 10.1016/j.physe.2003.08.012

M3 - Conference article

AN - SCOPUS:0347129558

VL - 20

SP - 251

EP - 254

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3-4

T2 - Proceedings of the 11th International Conference on Narrow Gap

Y2 - 16 June 2003 through 20 June 2003

ER -