Abstract
Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.
Original language | English |
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Pages (from-to) | 251-254 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 20 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 2004 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: 2003 Jun 16 → 2003 Jun 20 |
Keywords
- Ballistic transport
- InSb quantum wells
- Molecular beam epitaxy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics