Ballistic transport in InSb quantum wells at high temperature

N. Goel, S. J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)

Abstract

Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume20
Issue number3-4
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: 2003 Jun 162003 Jun 20

Keywords

  • Ballistic transport
  • InSb quantum wells
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Ballistic transport in InSb quantum wells at high temperature'. Together they form a unique fingerprint.

Cite this