Ballistic transport in InSb mesoscopic structures

N. Goel, J. Graham, J. C. Keay, K. Suzuki, S. Miyashita, M. B. Santos, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

26 Citations (Scopus)


Two different device geometries are fabricated to investigate ballistic transport of electrons in low-dimensional InSb structures. Negative bend resistance is observed in four-terminal devices of channel widths ranging from 0.2 to 0.65 μm. We also report the observation of conductance quantization in quantum point contacts fabricated using in-plane gates. The one-dimensional subbands depopulate with increasing transverse magnetic field up to 3 T. Zeeman splitting is resolved at magnetic fields above ∼0.9 T.

Original languageEnglish
Pages (from-to)455-459
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
Publication statusPublished - 2005 Feb
Externally publishedYes
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: 2004 May 102004 May 13


  • Ballistic transport
  • Bend resistance
  • InSb
  • Mesoscopic structures
  • Quantum point contact

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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