We have studied the negative bend resistance phenomena in a side-gated crossed-wire junction in the fractional quantum Hall regime. The dip near zero magnetic field due to electrons and that near the filling factor 1/2 due to composite fermions are both enhanced as the channel is squeezed. The width of the dips in the magnetic field exhibits opposite behavior as a function of gate voltage, implying that the effective potential that the composite fermions experience is different from that of the electrons. The gradual variation of the electron density due to the lateral potential depletion is anticipated to result in a deviation of the effective magnetic field in the vicinity of the channel boundary. We numerically examine the effects of a nonuniform magnetic field on the transmission properties.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1996 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics