TY - JOUR
T1 - Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field-Effect Transistors and Lateral Diodes
AU - Ryzhii, Victor
AU - Ryzhii, Maxim
AU - Satou, Akira
AU - Mitin, Vladimir
AU - Shur, Michael S.
AU - Otsuji, Taiichi
N1 - Funding Information:
The work at RIEC and UoA was supported by Japan Society for Promotion of Science (KAKENHI grant nos. 21H04546 and 20K20349), Japan; A01No. H31/A01. The work at RPI was supported by Office of Naval Research (N000141712976, Project Monitor Dr. Paul Maki).
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2022/1
Y1 - 2022/1
N2 - The operation of the graphene n+–i–n–n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region is analyzed. The momentum transfer of the injected ballistic electrons can lead to an effective Coulomb drag of the quasiequilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.
AB - The operation of the graphene n+–i–n–n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region is analyzed. The momentum transfer of the injected ballistic electrons can lead to an effective Coulomb drag of the quasiequilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.
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U2 - 10.1002/pssa.202100694
DO - 10.1002/pssa.202100694
M3 - Article
AN - SCOPUS:85119046717
VL - 219
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 1
M1 - 2100694
ER -