Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field-Effect Transistors and Lateral Diodes

Victor Ryzhii, Maxim Ryzhii, Akira Satou, Vladimir Mitin, Michael S. Shur, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

Abstract

The operation of the graphene n+–i–n–n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region is analyzed. The momentum transfer of the injected ballistic electrons can lead to an effective Coulomb drag of the quasiequilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2021

Keywords

  • ballistic electrons
  • electron drag
  • graphene field-effect transistor
  • graphene lateral diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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