Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field-Effect Transistors and Lateral Diodes

Victor Ryzhii, Maxim Ryzhii, Akira Satou, Vladimir Mitin, Michael S. Shur, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The operation of the graphene n+–i–n–n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region is analyzed. The momentum transfer of the injected ballistic electrons can lead to an effective Coulomb drag of the quasiequilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.

Original languageEnglish
Article number2100694
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume219
Issue number1
DOIs
Publication statusPublished - 2022 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

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