The physical property of nanocrystalline silicon (nc-Si) dots as a confined wide-gap material relates not only to photonics, but also to electronics. As supported experimentally and theoretically, the electronic structure with discrete levels significantly enhances the impact ionization rate, and then internal electron avalanche occurs at the early stage of photo-excitation or injection. The nc-Si diode, on the other hand, acts as a planar cold cathode which emits ballistic hot electrons. In addition to the use in vacuum, the device is available for the operation in solutions. In vacuum active-matrix nc-Si electron emitter array has been developed for massively parallel electron beam direct-write lithography. Another application scheme in solutions provides alternative thin films deposition of Si, Ge, and SiGe, in which the nc-Si emitter supplies highly reducing electrons. Recent advancements of these studies are discussed.
|Number of pages||8|
|Publication status||Published - 2014 Jan 1|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States|
Duration: 2014 May 11 → 2014 May 15
ASJC Scopus subject areas