We investigate ballistic transport characteristics of macroscopic four-terminal structures fabricated from a high mobility (7.8 × 106 cm2/Vs at 1.5 K) two-dimensional electron gas at the AlGaAs-GaAs heterointerface. Ballistic electron transport over 200 μm is confirmed from the experimental results. The obtained transport characteristics are well explained by Landauer-Büttiker equation based analysis in spite of the terminal width being larger than 3 μm.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering