Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

Seigo Tarucha, Yoshino K. Fukai, Yoshiro Hirayama, Tadashi Saku

Research output: Contribution to journalArticlepeer-review

Abstract

Ballistic electron transport in macroscopic four-terminal devices with a high electron mobility is studied. The bend resistance characteristics are well analyzed using the Landauer-Büttiker formula although the leads are too wide to form well-defined one-dimensional subbands. The ballistic length determined from this analysis agrees well with the mean free path deduced from a mobility and electron density. Transmission and reflection of ballistic electrons are manipulated using a strip gate placed so as to bisect the device. The transmission and reflection probabilities are determined as a function of gate voltage, and related to the change in the refraction of ballistic electron propagation across the regions of different electron densities.

Original languageEnglish
Pages (from-to)253-257
Number of pages5
JournalSurface Science
Volume263
Issue number1-3
DOIs
Publication statusPublished - 1992 Feb 19
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection'. Together they form a unique fingerprint.

Cite this