Ballistic electron effects in nanosilicon and their applications

N. Koshida, N. Ikegami, A. Kojima, R. Mentek, B. Gelloz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In nanocrystalline silicon (nc-Si) dots interconnected with tunnel oxides, the characteristic electron transport mode appears followed by highly hot electron effects: avalanche photoconduction and quasi-ballistic electron emission. Analysis of the former clarifies that the impact ionization rate in nc-Si dots is considerably higher than in bulk Si. The usefulness of the latter has been confirmed in various media. A typical example of the application in vacuum is the use as the excitation source for parallel electron beam lithography. Another potential is induced by the operation in aqueous and metal salt solutions, where the highly reducing reaction proceeds at the emitter surface. In SiCl4 and GeCl4 solutions, for instance, thin Si and Ge films are deposited without the use of any counter electrodes. Some topics of these effects are discussed here.

Original languageEnglish
Title of host publicationNanocrystal Embedded Dielectrics for Electronic and Photonic Devices
Pages95-102
Number of pages8
Edition4
DOIs
Publication statusPublished - 2013 Oct 21
EventNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 2013 May 122013 May 16

Publication series

NameECS Transactions
Number4
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/16

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Koshida, N., Ikegami, N., Kojima, A., Mentek, R., & Gelloz, B. (2013). Ballistic electron effects in nanosilicon and their applications. In Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices (4 ed., pp. 95-102). (ECS Transactions; Vol. 53, No. 4). https://doi.org/10.1149/05304.0095ecst