TY - GEN
T1 - Ballistic electron effects in nanosilicon and their applications
AU - Koshida, N.
AU - Ikegami, N.
AU - Kojima, A.
AU - Mentek, R.
AU - Gelloz, B.
PY - 2013
Y1 - 2013
N2 - In nanocrystalline silicon (nc-Si) dots interconnected with tunnel oxides, the characteristic electron transport mode appears followed by highly hot electron effects: avalanche photoconduction and quasi-ballistic electron emission. Analysis of the former clarifies that the impact ionization rate in nc-Si dots is considerably higher than in bulk Si. The usefulness of the latter has been confirmed in various media. A typical example of the application in vacuum is the use as the excitation source for parallel electron beam lithography. Another potential is induced by the operation in aqueous and metal salt solutions, where the highly reducing reaction proceeds at the emitter surface. In SiCl4 and GeCl4 solutions, for instance, thin Si and Ge films are deposited without the use of any counter electrodes. Some topics of these effects are discussed here.
AB - In nanocrystalline silicon (nc-Si) dots interconnected with tunnel oxides, the characteristic electron transport mode appears followed by highly hot electron effects: avalanche photoconduction and quasi-ballistic electron emission. Analysis of the former clarifies that the impact ionization rate in nc-Si dots is considerably higher than in bulk Si. The usefulness of the latter has been confirmed in various media. A typical example of the application in vacuum is the use as the excitation source for parallel electron beam lithography. Another potential is induced by the operation in aqueous and metal salt solutions, where the highly reducing reaction proceeds at the emitter surface. In SiCl4 and GeCl4 solutions, for instance, thin Si and Ge films are deposited without the use of any counter electrodes. Some topics of these effects are discussed here.
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U2 - 10.1149/05304.0095ecst
DO - 10.1149/05304.0095ecst
M3 - Conference contribution
AN - SCOPUS:84885629202
SN - 9781607683773
T3 - ECS Transactions
SP - 95
EP - 102
BT - Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices
T2 - Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting
Y2 - 12 May 2013 through 16 May 2013
ER -