Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs

S. Takaoka, K. Tsukagoshi, S. Wakayama, K. Murase, K. Gamo, S. Namba

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1b) is shorter than the elastic mean free path (1e) determined by the resistivity and mobility. However, the reduction ratio of 1b to 1e is nearly the same in the different mobility samples. The increasing rates of 1e and 1b with respect to electron concentration are also similar. It is interesting that the proportion of 1b to 1e hardly depends on electron concentrations and electron mobility.

Original languageEnglish
Pages (from-to)775-777
Number of pages3
JournalSolid State Communications
Volume83
Issue number10
DOIs
Publication statusPublished - 1992 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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