Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs

S. Takaoka; K. Tsukagoshi; S. Wakayama; K. Murase; K. Gamo; S. Namba

doi:10.1016/0038-1098(92)90025-5

Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs

S. Takaoka, K. Tsukagoshi, S. Wakayama, K. Murase, K. Gamo, S. Namba

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1_b) is shorter than the elastic mean free path (1_e) determined by the resistivity and mobility. However, the reduction ratio of 1_b to 1_e is nearly the same in the different mobility samples. The increasing rates of 1_e and 1_b with respect to electron concentration are also similar. It is interesting that the proportion of 1_b to 1_e hardly depends on electron concentrations and electron mobility.

Original language	English
Pages (from-to)	775-777
Number of pages	3
Journal	Solid State Communications
Volume	83
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(92)90025-5
Publication status	Published - 1992 Sep
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs",

abstract = "The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1b) is shorter than the elastic mean free path (1e) determined by the resistivity and mobility. However, the reduction ratio of 1b to 1e is nearly the same in the different mobility samples. The increasing rates of 1e and 1b with respect to electron concentration are also similar. It is interesting that the proportion of 1b to 1e hardly depends on electron concentrations and electron mobility.",

author = "S. Takaoka and K. Tsukagoshi and S. Wakayama and K. Murase and K. Gamo and S. Namba",

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T1 - Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs

AU - Takaoka, S.

AU - Tsukagoshi, K.

AU - Wakayama, S.

AU - Murase, K.

AU - Gamo, K.

AU - Namba, S.

PY - 1992/9

Y1 - 1992/9

N2 - The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1b) is shorter than the elastic mean free path (1e) determined by the resistivity and mobility. However, the reduction ratio of 1b to 1e is nearly the same in the different mobility samples. The increasing rates of 1e and 1b with respect to electron concentration are also similar. It is interesting that the proportion of 1b to 1e hardly depends on electron concentrations and electron mobility.

AB - The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1b) is shorter than the elastic mean free path (1e) determined by the resistivity and mobility. However, the reduction ratio of 1b to 1e is nearly the same in the different mobility samples. The increasing rates of 1e and 1b with respect to electron concentration are also similar. It is interesting that the proportion of 1b to 1e hardly depends on electron concentrations and electron mobility.

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JF - Solid State Communications

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