TY - JOUR
T1 - Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs
AU - Takaoka, S.
AU - Tsukagoshi, K.
AU - Wakayama, S.
AU - Murase, K.
AU - Gamo, K.
AU - Namba, S.
N1 - Funding Information:
Acknowledgment We would like to thank K.Kasahara of NEC Corp. and S.Nishi of Oki Electric Industry Co.,Ltd. for supplying the high mobility GaAs/AIGaAs wafers. We also thank T.Sawasaki and K.Oto for the Hall measurement of these wafers. This work is partially supported by a Grant-in-Aid for Scientific Research on Priority Area,"Electron Wave Interference Effects in Mesoscopic Structures" from the Ministry of Education, Science and Culture. One of us (S.T) acknowledges the support by a Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Science and Culture.
PY - 1992/9
Y1 - 1992/9
N2 - The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1b) is shorter than the elastic mean free path (1e) determined by the resistivity and mobility. However, the reduction ratio of 1b to 1e is nearly the same in the different mobility samples. The increasing rates of 1e and 1b with respect to electron concentration are also similar. It is interesting that the proportion of 1b to 1e hardly depends on electron concentrations and electron mobility.
AB - The ballistic mean free paths determined by magnetic electron focusing effect have been investigated in multi-terminal GaAs/AlGaAs devices with different electron mobility. The ballistic mean free path (1b) is shorter than the elastic mean free path (1e) determined by the resistivity and mobility. However, the reduction ratio of 1b to 1e is nearly the same in the different mobility samples. The increasing rates of 1e and 1b with respect to electron concentration are also similar. It is interesting that the proportion of 1b to 1e hardly depends on electron concentrations and electron mobility.
UR - http://www.scopus.com/inward/record.url?scp=0026927108&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026927108&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(92)90025-5
DO - 10.1016/0038-1098(92)90025-5
M3 - Article
AN - SCOPUS:0026927108
VL - 83
SP - 775
EP - 777
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 10
ER -