A new plasma source called balanced electron drift (BED) magnetron plasma was developed for SiO2 contact/via hole etching. E×B drift of electrons, which is notorious for degrading the uniformity of magnetron plasmas, has been completely balanced by applying appropriate 100 MHz rf power to the upper ring electrode. As a result, highly uniform self bias voltage (ΔVdc<4 V) and ion flux (ΔJion<±3%) profiles were obtained on 200mm wafer. BED etcher has additional benefit of reducing dopant deactivation in the Si substrate due to the reduction in carbon implantation. Also, the addition of Xe having large mass number of 131 and large atomic radius of 2.17 angstrom has been confirmed to exhibit drastic suppression of the dopant deactivation, which results in low contact resistance without additional ion implantation after contact etch.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1999 Dec 1|
|Event||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 1999 Jun 14 → 1999 Jun 16
ASJC Scopus subject areas
- Electrical and Electronic Engineering