Back Side Damage Gettering of Cu Using a Cavitating Jet

H. Kumano, H. Soyama

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effectiveness of the back side damage introduced by a cavitating jet to getter contamination in silicon has been demonstrated. Back side damage required for gettering has been introduced successfully into a silicon wafer, utilizing impacts caused by the cavitating jet. A wafer, which had previously been back side damaged in a selected area, was intentionally contaminated and submitted to a thermal treatment. The effectiveness of gettering was confirmed by the observation of etch pits on the surface, induced by the intentional contamination, other than in regions' below which there was back side damage. No etch pits were observed in regions with back side damage.

Original languageEnglish
Pages (from-to)G51-G52
JournalElectrochemical and Solid-State Letters
Volume7
Issue number4
DOIs
Publication statusPublished - 2004 Apr 15

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Back Side Damage Gettering of Cu Using a Cavitating Jet'. Together they form a unique fingerprint.

  • Cite this