Back-gate control in an InAs-based two-dimensional system

K. Suzuki; S. Miyashita; Y. Hirayama

doi:10.1016/S0921-4534(00)01706-8

Back-gate control in an InAs-based two-dimensional system

K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Article › peer-review

Abstract

Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

Original language	English
Pages (from-to)	125-127
Number of pages	3
Journal	Physica C: Superconductivity and its applications
Volume	352
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4534(00)01706-8
Publication status	Published - 2001 Apr 1
Externally published	Yes

Keywords

Back gate
InAs
Quantum Hall effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/S0921-4534(00)01706-8

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@article{333aa29cdd304b1a8dab6a0da8737a55,

title = "Back-gate control in an InAs-based two-dimensional system",

abstract = "Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.",

keywords = "Back gate, InAs, Quantum Hall effect",

author = "K. Suzuki and S. Miyashita and Y. Hirayama",

year = "2001",

month = apr,

day = "1",

doi = "10.1016/S0921-4534(00)01706-8",

language = "English",

volume = "352",

pages = "125--127",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Back-gate control in an InAs-based two-dimensional system

AU - Suzuki, K.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

AB - Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

KW - Back gate

KW - InAs

KW - Quantum Hall effect

UR - http://www.scopus.com/inward/record.url?scp=0035306018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035306018&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(00)01706-8

DO - 10.1016/S0921-4534(00)01706-8

M3 - Article

AN - SCOPUS:0035306018

VL - 352

SP - 125

EP - 127

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - 1-4

ER -