Back-gate control in an InAs-based two-dimensional system

K. Suzuki, S. Miyashita, Y. Hirayama

Research output: Contribution to journalArticlepeer-review


Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.

Original languageEnglish
Pages (from-to)125-127
Number of pages3
JournalPhysica C: Superconductivity and its applications
Issue number1-4
Publication statusPublished - 2001 Apr 1
Externally publishedYes


  • Back gate
  • InAs
  • Quantum Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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