Abstract
Growing a heterostructure on a conductive substrate, the channel carrier density can be controlled by an applied gate voltage to the substrate. We made InAs/AlGaSb single-quantum wells using n- and p-type InAs substrates as a back-gate. The devices perform well and the gate-leakage characteristics are better for the n-type substrates than for the p-type substrates.
Original language | English |
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Pages (from-to) | 125-127 |
Number of pages | 3 |
Journal | Physica C: Superconductivity and its applications |
Volume | 352 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2001 Apr 1 |
Externally published | Yes |
Keywords
- Back gate
- InAs
- Quantum Hall effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering