B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr2FeMoO6 Thin Film

Nand Kumar, Raveena Gupta, Ripudaman Kaur, Daichi Oka, Sonali Kakkar, Sanjeev Kumar, Surendra Singh, Tomoteru Fukumura, Chandan Bera, Suvankar Chakraverty

Research output: Contribution to journalArticlepeer-review

Abstract

The high degree of spin-polarization observed in ordered double perovskite oxide Sr2FeMoO6 at room temperature has attracted considerable interest from both fundamental and practical points of view. In this paper, we have shown a significant change in spin-polarization with a small B-site off-stoichiometry. We have demonstrated a direct correlation between the growth process, Fe:Mo (B-site) stoichiometry, and the electrical properties of half metallic Sr2FeMoO6 thin film. We have shown that varying the Fe:Mo (B-site) stoichiometry by a small atomic percent results in an order of magnitude change in resistivity and at least four times change in magnetoresistance. Theoretical calculation suggests a strong correlation between electronic structure, electronic polarization, and B-site non-stoichiometry.

Original languageEnglish
Pages (from-to)597-604
Number of pages8
JournalACS Applied Electronic Materials
Volume3
Issue number2
DOIs
Publication statusPublished - 2021 Feb 23

Keywords

  • double perovskite
  • electrical and magnetic properties
  • half metal
  • spin polarization
  • stoichiometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry

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