B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr2FeMoO6 Thin Film

Nand Kumar; Raveena Gupta; Ripudaman Kaur; Daichi Oka; Sonali Kakkar; Sanjeev Kumar; Surendra Singh; Tomoteru Fukumura; Chandan Bera; Suvankar Chakraverty

doi:10.1021/acsaelm.0c00933

B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr₂FeMoO₆ Thin Film

Nand Kumar, Raveena Gupta, Ripudaman Kaur, Daichi Oka, Sonali Kakkar, Sanjeev Kumar, Surendra Singh, Tomoteru Fukumura, Chandan Bera, Suvankar Chakraverty

Research output: Contribution to journal › Article › peer-review

Abstract

The high degree of spin-polarization observed in ordered double perovskite oxide Sr2FeMoO6 at room temperature has attracted considerable interest from both fundamental and practical points of view. In this paper, we have shown a significant change in spin-polarization with a small B-site off-stoichiometry. We have demonstrated a direct correlation between the growth process, Fe:Mo (B-site) stoichiometry, and the electrical properties of half metallic Sr2FeMoO6 thin film. We have shown that varying the Fe:Mo (B-site) stoichiometry by a small atomic percent results in an order of magnitude change in resistivity and at least four times change in magnetoresistance. Theoretical calculation suggests a strong correlation between electronic structure, electronic polarization, and B-site non-stoichiometry.

Original language	English
Pages (from-to)	597-604
Number of pages	8
Journal	ACS Applied Electronic Materials
Volume	3
Issue number	2
DOIs	https://doi.org/10.1021/acsaelm.0c00933
Publication status	Published - 2021 Feb 23

Keywords

double perovskite
electrical and magnetic properties
half metal
spin polarization
stoichiometry

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrochemistry

Access to Document

10.1021/acsaelm.0c00933

Fingerprint Dive into the research topics of 'B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr<sub>2</sub>FeMoO<sub>6</sub> Thin Film'. Together they form a unique fingerprint.

Cite this

B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr₂FeMoO₆ Thin Film. / Kumar, Nand; Gupta, Raveena; Kaur, Ripudaman; Oka, Daichi; Kakkar, Sonali; Kumar, Sanjeev; Singh, Surendra; Fukumura, Tomoteru; Bera, Chandan; Chakraverty, Suvankar.

In: ACS Applied Electronic Materials, Vol. 3, No. 2, 23.02.2021, p. 597-604.

Research output: Contribution to journal › Article › peer-review

@article{b8bb0b2c646d4c1dbe74ac0f89c25fbe,

title = "B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr2FeMoO6 Thin Film",

abstract = "The high degree of spin-polarization observed in ordered double perovskite oxide Sr2FeMoO6 at room temperature has attracted considerable interest from both fundamental and practical points of view. In this paper, we have shown a significant change in spin-polarization with a small B-site off-stoichiometry. We have demonstrated a direct correlation between the growth process, Fe:Mo (B-site) stoichiometry, and the electrical properties of half metallic Sr2FeMoO6 thin film. We have shown that varying the Fe:Mo (B-site) stoichiometry by a small atomic percent results in an order of magnitude change in resistivity and at least four times change in magnetoresistance. Theoretical calculation suggests a strong correlation between electronic structure, electronic polarization, and B-site non-stoichiometry.",

keywords = "double perovskite, electrical and magnetic properties, half metal, spin polarization, stoichiometry",

author = "Nand Kumar and Raveena Gupta and Ripudaman Kaur and Daichi Oka and Sonali Kakkar and Sanjeev Kumar and Surendra Singh and Tomoteru Fukumura and Chandan Bera and Suvankar Chakraverty",

note = "Funding Information: The authors acknowledge financial support from BRNS-DAE project number 58/14/2019-BRNS/1056. Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

year = "2021",

month = feb,

day = "23",

doi = "10.1021/acsaelm.0c00933",

language = "English",

volume = "3",

pages = "597--604",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - B-Site Stoichiometry Control of the Magnetotransport Properties of Epitaxial Sr2FeMoO6 Thin Film

AU - Kumar, Nand

AU - Gupta, Raveena

AU - Kaur, Ripudaman

AU - Oka, Daichi

AU - Kakkar, Sonali

AU - Kumar, Sanjeev

AU - Singh, Surendra

AU - Fukumura, Tomoteru

AU - Bera, Chandan

AU - Chakraverty, Suvankar

PY - 2021/2/23

Y1 - 2021/2/23

N2 - The high degree of spin-polarization observed in ordered double perovskite oxide Sr2FeMoO6 at room temperature has attracted considerable interest from both fundamental and practical points of view. In this paper, we have shown a significant change in spin-polarization with a small B-site off-stoichiometry. We have demonstrated a direct correlation between the growth process, Fe:Mo (B-site) stoichiometry, and the electrical properties of half metallic Sr2FeMoO6 thin film. We have shown that varying the Fe:Mo (B-site) stoichiometry by a small atomic percent results in an order of magnitude change in resistivity and at least four times change in magnetoresistance. Theoretical calculation suggests a strong correlation between electronic structure, electronic polarization, and B-site non-stoichiometry.

AB - The high degree of spin-polarization observed in ordered double perovskite oxide Sr2FeMoO6 at room temperature has attracted considerable interest from both fundamental and practical points of view. In this paper, we have shown a significant change in spin-polarization with a small B-site off-stoichiometry. We have demonstrated a direct correlation between the growth process, Fe:Mo (B-site) stoichiometry, and the electrical properties of half metallic Sr2FeMoO6 thin film. We have shown that varying the Fe:Mo (B-site) stoichiometry by a small atomic percent results in an order of magnitude change in resistivity and at least four times change in magnetoresistance. Theoretical calculation suggests a strong correlation between electronic structure, electronic polarization, and B-site non-stoichiometry.

KW - double perovskite

KW - electrical and magnetic properties

KW - half metal

KW - spin polarization

KW - stoichiometry

UR - http://www.scopus.com/inward/record.url?scp=85101750661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85101750661&partnerID=8YFLogxK

U2 - 10.1021/acsaelm.0c00933

DO - 10.1021/acsaelm.0c00933

M3 - Article

AN - SCOPUS:85101750661

VL - 3

SP - 597

EP - 604

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

SN - 2637-6113

IS - 2

ER -