B- And P-doped Si0.8Ge0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor

Kazuki Tajima; Woosuck Shin; Maiko Nishibori; Norimitsu Murayama; Toshio Itoh; Noriya Izu; Ichiro Matsubara

doi:10.4028/0-87849-411-1.99

B- And P-doped Si_0.8Ge_0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor

Kazuki Tajima, Woosuck Shin, Maiko Nishibori, Norimitsu Murayama, Toshio Itoh, Noriya Izu, Ichiro Matsubara

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si_0.8Ge_0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si_0.8Ge_0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si _0.8Ge_0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Key Engineering Materials
Volume	320
DOIs	https://doi.org/10.4028/0-87849-411-1.99
Publication status	Published - 2006
Externally published	Yes

Keywords

Helicon sputtering
High temperature annealing
Hydrogen sensor
SiGe
Thermoelectric

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-411-1.99

Cite this

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title = "B- And P-doped Si0.8Ge0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor",

abstract = "Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si 0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.",

keywords = "Helicon sputtering, High temperature annealing, Hydrogen sensor, SiGe, Thermoelectric",

author = "Kazuki Tajima and Woosuck Shin and Maiko Nishibori and Norimitsu Murayama and Toshio Itoh and Noriya Izu and Ichiro Matsubara",

year = "2006",

doi = "10.4028/0-87849-411-1.99",

language = "English",

volume = "320",

pages = "99--102",

journal = "Key Engineering Materials",

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publisher = "Trans Tech Publications",

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TY - JOUR

T1 - B- And P-doped Si0.8Ge0.2 thin film deposited by helicon sputtering for the micro-thermoelectric gas sensor

AU - Tajima, Kazuki

AU - Shin, Woosuck

AU - Nishibori, Maiko

AU - Murayama, Norimitsu

AU - Itoh, Toshio

AU - Izu, Noriya

AU - Matsubara, Ichiro

PY - 2006

Y1 - 2006

N2 - Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si 0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

AB - Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si 0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

KW - Helicon sputtering

KW - High temperature annealing

KW - Hydrogen sensor

KW - SiGe

KW - Thermoelectric

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