The fabrication of the azafullerene (C59N)2 thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 103 and field-effect electron mobility of 3.8×10-4 cm2 V-1 s-1 at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)