Azafullerene (C59N)2 thin-film field-effect transistors

Ryotaro Kumashiro, Katsumi Tanigaki, Hirotaka Ohashi, Nikos Tagmatarchis, Haruhito Kato, Hisanori Shinohara, Takeshi Akasaka, Kenichi Kato, Shinobu Aoyagi, Shigeru Kimura, Masaki Takata

    Research output: Contribution to journalArticle

    13 Citations (Scopus)

    Abstract

    The fabrication of the azafullerene (C59N)2 thin film field-effect transistors (FET) was presented. The properties of the FET, including electron carrier mobility, were also analyzed. The x-ray diffraction analysis was used for the study. It was observed that the azafullerene FET showed n-channel characteristics with on-off current ratio of 103 and field-effect electron mobility of 3.8×10-4 cm2 V-1 s-1 at room temperature.

    Original languageEnglish
    Pages (from-to)2154-2156
    Number of pages3
    JournalApplied Physics Letters
    Volume84
    Issue number12
    DOIs
    Publication statusPublished - 2004 Mar 22

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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    Kumashiro, R., Tanigaki, K., Ohashi, H., Tagmatarchis, N., Kato, H., Shinohara, H., Akasaka, T., Kato, K., Aoyagi, S., Kimura, S., & Takata, M. (2004). Azafullerene (C59N)2 thin-film field-effect transistors. Applied Physics Letters, 84(12), 2154-2156. https://doi.org/10.1063/1.1667013