Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium

H. Ohno, S. Goto, Y. Nomura, Y. Morishita, A. Watanabe, Y. Katayama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In situ Auger electron spectroscopy is employed to study the dynamics of the desorption process of carbon and its related species from clean molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium under the conditions where atomic layer epitaxy takes place by metalorganic molecular beam epitaxy. The direct real time spectroscopic observation of the surfaces by Auger electron spectroscopy shows that, after exposure to trimethylgallium, the initial carbon signal intensity exponentially decreases with an activation energy of 1.3 eV and reaches a steady state level.

Original languageEnglish
Pages (from-to)2248-2250
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number18
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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