Auger de-excitation of the 1.54 μm emission of Er- and O-implanted silicon

T. Nakanose, T. Kimura, H. Isshiki, S. Yugo, R. Saito

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


This paper describes the Auger de-excitation of the Er3+-related 1.54 μm luminescence of Er and O coimplanted silicon. Time response of the Er-related 1.54 μm emission to 0.3 ns wide light pulses of the 337 nm N2 laser line is measured under CW illumination of the Ar ion laser 488 nm line. O coimplantation is found to produce new Si:Er-O luminescence centers which illuminate at the same wavelength as Si:Er, but with a much shorter fluorescence lifetime. The time response of the Si:Er-O luminescence is found to be very sensitive to the Ar 488 nm CW illumination. Both the intensity and the fluorescence lifetime decrease rapidly with increase of the CW light intensity. The Auger coefficient of Er-O centers obtained is about ten times larger with respect to Si:Er.

Original languageEnglish
Pages (from-to)1080-1084
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 2000 Mar
Externally publishedYes
EventThe 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger
Duration: 1999 Jul 261999 Jul 30

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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