Au/GaAs magnetoresistive-switch-effect devices fabricated by wet etching

Zhi Gang Sun, Masaki Mizuguchi, Hiroyuki Akinaga

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Au/GaAs magnetoresistive-switch-effect (MRS effect) devices were successfully fabricated by the wet etching method. A large MRS effect was observed. In the current-voltage curves, the current jumped steeply at a threshold voltage of 32.0 V. The threshold voltages shifted to higher values and became less steep with increasing magnetic field. Above 2,000 Oe, no current jump driven by the applied voltage could be observed. The magnetoresistance (MR) ratio reached 1,000,000% at 15,000 Oe when the devices were operated above the threshold voltage. Also magnetic field sensitivity was greatly improved. To achieve a 1000% MR ratio, only 300 Oe was required at 32.2V.

Original languageEnglish
Pages (from-to)2101-2103
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2004 Apr
Externally publishedYes


  • Magnetoresistance
  • Magnetoresistive-switch effect
  • Wet etching

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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