Atomistic study of GaN surface grown on Si(111)

Z. T. Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue

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    16 Citations (Scopus)

    Abstract

    GaN is directly grown on Si(111) by radio-frequency plasma-assisted molecular-beam epitaxy, and the surface is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). By optimizing the growth condition, well-defined surface reconstructions are observed in atomically-resolved STM images after the additional Ga deposition, indicating the uniform N-polarity of the grown film. We show that N-rich condition in the initial GaN growth and slightly Ga-rich condition in the subsequent growth are critical in order to achieve monopolar uniform GaN films.

    Original languageEnglish
    Article number032110
    JournalApplied Physics Letters
    Volume87
    Issue number3
    DOIs
    Publication statusPublished - 2005 Jul 18

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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