Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Kenta Imada, Manabu Ishimaru, Kazuhisa Sato, Haizhou Xue, Yanwen Zhang, Steven Shannon, William J. Weber

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)


    Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

    Original languageEnglish
    Pages (from-to)433-437
    Number of pages5
    JournalJournal of Nuclear Materials
    Publication statusPublished - 2015 Jun 29


    • Amorphization
    • Carbides
    • Nanostructured materials
    • Scanning/transmission electron microscopy (STEM)

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Materials Science(all)
    • Nuclear Energy and Engineering


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