TY - JOUR
T1 - Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance
AU - Imada, Kenta
AU - Ishimaru, Manabu
AU - Sato, Kazuhisa
AU - Xue, Haizhou
AU - Zhang, Yanwen
AU - Shannon, Steven
AU - Weber, William J.
N1 - Funding Information:
This work was supported in part by Grant-in-Aid for Scientific Research (B) (Grant No. 25289249 ) from the Ministry of Education, Sports, Science, and Technology, Japan (MI), by the U.S. Department of Energy, Office of Sciences, Basic Energy Sciences, Materials Sciences and Engineering Division (YZ and WJW), and Nuclear Energy University Programs (HX and SS). TEM observations were performed under the Cooperative Research Program of “Network Joint Research Center for Materials and Devices” of ISIR, Osaka University, and under the inter-university cooperative research program of the IMR, Tohoku University.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/6/29
Y1 - 2015/6/29
N2 - Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.
AB - Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.
KW - Amorphization
KW - Carbides
KW - Nanostructured materials
KW - Scanning/transmission electron microscopy (STEM)
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U2 - 10.1016/j.jnucmat.2015.06.036
DO - 10.1016/j.jnucmat.2015.06.036
M3 - Article
AN - SCOPUS:84933504872
VL - 465
SP - 433
EP - 437
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
SN - 0022-3115
ER -