Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures

Yutaka Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomistic structure of ZnSe needle-like nanowires on a ZnSe/GaAs(001) epitaxial layer, grown catalytically by means of molecular beam epitaxy operated at low temperatures (527 or 573 K), was studied. A nanowire was the zinc blende structure. The diameter at the top was in the range from 8 to 20 nm, and the length was about 200 nm. It was implied that the optical property differs from that of the bulk crystals, presumably due to the wire confinement effect.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages115-116
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • Atomistic structure
  • Catalytic growth
  • Low-temperature molecular beam epitaxy
  • Nanowires
  • ZnSe

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures'. Together they form a unique fingerprint.

Cite this