Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy

Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A Frank-type stacking fault bounded by a partial dislocation, about a few nanometers in size, was observed in a commercial GaAs:Si wafer (with the Si concentration of ∼ 1018 cm- 3) annealed at the temperature of about 950 K, by cross-sectional scanning tunneling microscopy. There existed no charge around the stacking fault, unlike in heavily Si-doped GaAs. There was a localized energy level associated with the stacking fault, as expected theoretically in the pure stacking fault in which Si atoms do not exist.

Original languageEnglish
Pages (from-to)230-233
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

Keywords

  • Cross-sectional scanning tunneling microscopy
  • Si-doped GaAs
  • Stacking faults

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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