Atomistic structure of Si atoms agglomerated nearby a stacking fault in a commercial GaAs:Si

Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Point defects nearby a Frank-type stacking fault in a commercial GaAs:Si wafer (with the Si concentration of about 1018 cm-3) were examined by ultrahigh-vacuum cross-sectional scanning tunneling microscopy (UHV-XSTM). The defects were identified as pairs of a Si donor and a Ga vacancy. Even though the pairs were electrically neutral, the Si donors in the pairs might be active when they were in the bulk crystal, since the Ga vacancies in the pairs were considered to be introduced after the UHV-XSTM specimen preparation. The Si donors might be agglomerated towards the stacking fault, since the Si concentration nearby the stacking fault was rather high in comparison with the surrounding region.

Original languageEnglish
Pages (from-to)2944-2946
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
Publication statusPublished - 2008
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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