Atomistic structure and strain relaxation in Czochralski-grown SixGe1-x bulk alloys

I. Yonenaga, M. Sakurai, M. H.F. Sluiter, Y. Kawazoe, S. Muto

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The local atomistic structure in bulk SixGe1-x alloys in the whole composition range 0 < × < 1 was investigated experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown bulk SiGe crystals it is found that bulk SiGe is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0 < × < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The results indicate that SiGe is a typical disorder material and that the bond lengths and bond angles are distorted with alloy composition in SiGe.

Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume16
Issue number7
DOIs
Publication statusPublished - 2005 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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