Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-Nx/C) in acid solution

Li Xu, Guoshun Pan, Chunli Zou, Xiaolei Shi, Yuyu Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a novel method for preparing atomically smooth gallium nitride (GaN) wafer surfaces which involves chemical mechanical polishing with a non-noble metal catalyst (Fe-Nx) in acidic slurry is presented. It was confirmed that non-noble metal catalyst based slurry could be used for gallium face of GaN. Atomic force microscope images of the processed surface indicate that an atomically flat surface with Ra=0.0518 nm was achieved after planarization and the processed surface has an atomic step-terrace structure. Besides, the rate of removal of the GaN surface was measured to be approximately 66.9 nm/h, more than triple times higher than that nothing was used as catalyst.

Original languageEnglish
Title of host publicationICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages237-241
Number of pages5
ISBN (Electronic)9781479955565
DOIs
Publication statusPublished - 2015 Jan 20
Event11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, Japan
Duration: 2014 Nov 192014 Nov 21

Publication series

NameICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

Other

Other11th International Conference on Planarization/CMP Technology, ICPT 2014
CountryJapan
CityKobe
Period14/11/1914/11/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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