Atomically resolved local variation of the barrier height of the flip-flop motion of single buckled dimers of Si(100)

K. Hata, Y. Sainoo, H. Shigekawa

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)

Abstract

Single buckled dimers of Si(100) exhibiting flip-flop motions were analyzed. The dynamics were observed by locating the tip of a scanning tunneling microscope over a flip-flopping dimer while measuring the tunneling current. The activation energy as well as the energy splitting between the stable configurations of buckling were both estimated using statistical methods.

Original languageEnglish
Pages (from-to)3084-3087
Number of pages4
JournalPhysical review letters
Volume86
Issue number14
DOIs
Publication statusPublished - 2001 Apr 2

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Atomically resolved local variation of the barrier height of the flip-flop motion of single buckled dimers of Si(100)'. Together they form a unique fingerprint.

Cite this