Atomically flat, ultra thin-SiO                         2                         /Si(001) interface formation by UHV heating

Masaaki Niwa; Kenji Okada; Robert Sinclair

doi:10.1016/0169-4332(96)00313-3

Atomically flat, ultra thin-SiO ₂ /Si(001) interface formation by UHV heating

Masaaki Niwa, Kenji Okada, Robert Sinclair

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO ₂ /Si(001) interface roughness. Atomically flat SiO ₂ /Si(001) interfaces were realized by preparing the Si(001)-2 × 1 surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness (T _ox < ~∼ 9 nm). As for the 'wet-cleaned' surfaces, a wide variety of the interface roughness was observed at T _ox < ∼ 4 nm which corresponds to the 'initial oxide thickness (T _io )' which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the 'wet-cleaned' sample at T _ox < T _io .

Original language	English
Pages (from-to)	425-430
Number of pages	6
Journal	Applied Surface Science
Volume	100-101
DOIs	https://doi.org/10.1016/0169-4332(96)00313-3
Publication status	Published - 1996 Jul
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(96)00313-3

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@article{3d7137af35ba444ca09f88e2a78fa04e,

title = " Atomically flat, ultra thin-SiO 2 /Si(001) interface formation by UHV heating ",

abstract = " Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO 2 /Si(001) interface roughness. Atomically flat SiO 2 /Si(001) interfaces were realized by preparing the Si(001)-2 × 1 surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness (T ox < ~∼ 9 nm). As for the 'wet-cleaned' surfaces, a wide variety of the interface roughness was observed at T ox < ∼ 4 nm which corresponds to the 'initial oxide thickness (T io )' which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the 'wet-cleaned' sample at T ox < T io . ",

author = "Masaaki Niwa and Kenji Okada and Robert Sinclair",

year = "1996",

month = jul,

doi = "10.1016/0169-4332(96)00313-3",

language = "English",

volume = "100-101",

pages = "425--430",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Atomically flat, ultra thin-SiO 2 /Si(001) interface formation by UHV heating

AU - Niwa, Masaaki

AU - Okada, Kenji

AU - Sinclair, Robert

PY - 1996/7

Y1 - 1996/7

N2 - Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO 2 /Si(001) interface roughness. Atomically flat SiO 2 /Si(001) interfaces were realized by preparing the Si(001)-2 × 1 surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness (T ox < ~∼ 9 nm). As for the 'wet-cleaned' surfaces, a wide variety of the interface roughness was observed at T ox < ∼ 4 nm which corresponds to the 'initial oxide thickness (T io )' which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the 'wet-cleaned' sample at T ox < T io .

AB - Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO 2 /Si(001) interface roughness. Atomically flat SiO 2 /Si(001) interfaces were realized by preparing the Si(001)-2 × 1 surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness (T ox < ~∼ 9 nm). As for the 'wet-cleaned' surfaces, a wide variety of the interface roughness was observed at T ox < ∼ 4 nm which corresponds to the 'initial oxide thickness (T io )' which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the 'wet-cleaned' sample at T ox < T io .

UR - http://www.scopus.com/inward/record.url?scp=0030564517&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030564517&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(96)00313-3

DO - 10.1016/0169-4332(96)00313-3

M3 - Article

AN - SCOPUS:0030564517

VL - 100-101

SP - 425

EP - 430

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Atomically flat, ultra thin-SiO ₂ /Si(001) interface formation by UHV heating

Abstract

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