Abstract
Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO 2 /Si(001) interface roughness. Atomically flat SiO 2 /Si(001) interfaces were realized by preparing the Si(001)-2 × 1 surface in UHV followed by thermal oxidation. This planarization is significant in the range of oxide thickness (T ox < ~∼ 9 nm). As for the 'wet-cleaned' surfaces, a wide variety of the interface roughness was observed at T ox < ∼ 4 nm which corresponds to the 'initial oxide thickness (T io )' which appeared in the oxide growth kinetics. The electron scattering caused by the interface roughness might degrade the inversion electron mobility for the 'wet-cleaned' sample at T ox < T io .
Original language | English |
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Pages (from-to) | 425-430 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 100-101 |
DOIs | |
Publication status | Published - 1996 Jul |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films