Conventional wet cleaning and ultrahigh-vacuum (UHV)-annealed cleaning prior to thermal oxidation were compared with their effects on Si02/Si(00l) interface roughness. In comparison with the wet cleaned surfaces, atomically flat interfaces were obtained and the roughness was reduced to less than 0.1 nm in RMS for the UHV-annealed surfaces by annealing the surface at 1100°C in UHV (5 x 10-10Torr). This planarizatin was remarkable in the ultrathin oxide region (<~4nm).
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering