Atomically Flat Si02/Si(00l) Interface Formation by UHV Annealing

Masaaki Niwa

Research output: Contribution to journalArticlepeer-review


Conventional wet cleaning and ultrahigh-vacuum (UHV)-annealed cleaning prior to thermal oxidation were compared with their effects on Si02/Si(00l) interface roughness. In comparison with the wet cleaned surfaces, atomically flat interfaces were obtained and the roughness was reduced to less than 0.1 nm in RMS for the UHV-annealed surfaces by annealing the surface at 1100°C in UHV (5 x 10-10Torr). This planarizatin was remarkable in the ultrathin oxide region (<~4nm).

Original languageEnglish
Pages (from-to)903-908
Number of pages6
JournalShinku/Journal of the Vacuum Society of Japan
Issue number11
Publication statusPublished - 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


Dive into the research topics of 'Atomically Flat Si02/Si(00l) Interface Formation by UHV Annealing'. Together they form a unique fingerprint.

Cite this