Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

Engineering

• Characteristics 100%
• Radical Reaction 50%
• Annealing 50%
• Crystal Orientation 50%
• Flatness 50%
• Silicon Surface 50%
• Conventional Technology 50%
• Film Silicon 50%
• Lower Temperature 50%
• Oxidation Reaction 50%
• Large Diameter 50%
• Silicon 50%