Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Atomically flat silicon surface constructed with atomic terraces and steps is realized by pure argon ambience annealing at 1200°C on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. Only the radical reaction based insulator formation technology such as oxidation utilizing oxygen radicals carried out at low temperature (400°C)can preserve the atomically flatness at the gate insulator film/silicon interface. CMOSFET having the atomically flat interface exhibit extremely lower 1/f noise and higher mobility characteristics with smaller electrical variation than those of CMOSFETs fabricated by the conventional technologies.

Original languageEnglish
Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages83-86
Number of pages4
ISBN (Print)9781424423644
DOIs
Publication statusPublished - 2008
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
Duration: 2008 Sep 152008 Sep 19

Publication series

NameESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
Country/TerritoryUnited Kingdom
CityEdinburgh, Scotland
Period08/9/1508/9/19

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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