Atomically controlled processing in silicon-based CVD epitaxial growth

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms after thermal adsorption and reaction of hydride gases on Si1-xGex(100) (x = 0-1) surface are generalized based on the Langmuir-type model. Moreover, Si-based epitaxial growth on N, P or C atomic layer formed on Si1-xGe x100 surface is achieved at temperatures below 500 °C. N atoms of about 4×1014 cm-2 are buried in the Si epitaxial layer within about 1 nm thick region. In the Si0.5Ge0.5 epitaxial layer, N atoms of about 6×1014 cm-2 are confined within about 1.5 nm thick region. The confined N atoms in Si 1-xGex preferentially form Si-N bonds. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1-xGe x100with P atomic amount of below about 4×1014 cm-2 using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P atomic amount around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si1-xGex /Si heterointerface. These results open the way to atomically controlled technology for ULSIs.

Original languageEnglish
Pages (from-to)8348-8353
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number9
Publication statusPublished - 2011 Sep 1


  • Atomic layer doping
  • Atomically controlled processing
  • C
  • Chemical vapor deposition
  • Ge
  • Group IV semiconductor
  • N
  • P
  • Si

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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