TY - GEN
T1 - Atomically controlled processing for nitrogen doping of group IV semiconductors
AU - Murota, Junichi
AU - Sakuraba, Masao
AU - Tillack, Bernd
PY - 2014/1/23
Y1 - 2014/1/23
N2 - The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si1-xGex by NH3, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si0.5Ge0.5 epitaxial layer, N doping dose of 6 × 1014 cm-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si1-xGex preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.
AB - The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si1-xGex by NH3, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si0.5Ge0.5 epitaxial layer, N doping dose of 6 × 1014 cm-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si1-xGex preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.
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U2 - 10.1109/ICSICT.2014.7021213
DO - 10.1109/ICSICT.2014.7021213
M3 - Conference contribution
AN - SCOPUS:84946687172
T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
A2 - Zhou, Jia
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Y2 - 28 October 2014 through 31 October 2014
ER -