Atomically controlled processing for nitrogen doping of group IV semiconductors

Junichi Murota, Masao Sakuraba, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si1-xGex by NH3, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si0.5Ge0.5 epitaxial layer, N doping dose of 6 × 1014 cm-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si1-xGex preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479932962
DOIs
Publication statusPublished - 2014 Jan 23
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 2014 Oct 282014 Oct 31

Publication series

NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/TerritoryChina
CityGuilin
Period14/10/2814/10/31

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

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