Atomically controlled processing for nitrogen doping of group IV semiconductors

Junichi Murota; Masao Sakuraba; Bernd Tillack

doi:10.1109/ICSICT.2014.7021213

Atomically controlled processing for nitrogen doping of group IV semiconductors

Junichi Murota, Masao Sakuraba, Bernd Tillack

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si_1-xGe_x by NH₃, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si_0.5Ge_0.5 epitaxial layer, N doping dose of 6 × 10¹⁴ cm^-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si_1-xGe_x preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si_0.5Ge_0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021213
Publication status	Published - 2014 Jan 23
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 2014 Oct 28 → 2014 Oct 31

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country	China
City	Guilin
Period	14/10/28 → 14/10/31

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Computer Science Applications

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Murota, J., Sakuraba, M., & Tillack, B. (2014). Atomically controlled processing for nitrogen doping of group IV semiconductors. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021213] (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021213

Atomically controlled processing for nitrogen doping of group IV semiconductors. / Murota, Junichi; Sakuraba, Masao; Tillack, Bernd.

Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021213 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murota, J, Sakuraba, M & Tillack, B 2014, Atomically controlled processing for nitrogen doping of group IV semiconductors. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021213, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 14/10/28. https://doi.org/10.1109/ICSICT.2014.7021213

Murota J, Sakuraba M, Tillack B. Atomically controlled processing for nitrogen doping of group IV semiconductors. In Zhou J, Tang T-A, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021213. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). https://doi.org/10.1109/ICSICT.2014.7021213

Murota, Junichi ; Sakuraba, Masao ; Tillack, Bernd. / Atomically controlled processing for nitrogen doping of group IV semiconductors. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

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title = "Atomically controlled processing for nitrogen doping of group IV semiconductors",

abstract = "The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si1-xGex by NH3, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si0.5Ge0.5 epitaxial layer, N doping dose of 6 × 1014 cm-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si1-xGex preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.",

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N2 - The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si1-xGex by NH3, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si0.5Ge0.5 epitaxial layer, N doping dose of 6 × 1014 cm-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si1-xGex preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.

AB - The concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control. On the atomic-order surface nitridation of Si1-xGex by NH3, N atoms bound to Ge atoms tend to be transferred to Si atoms during heat treatment. In the Si0.5Ge0.5 epitaxial layer, N doping dose of 6 × 1014 cm-2 is confined within an about 1.5 nm thick region even after heat treatment at 650 °C. The N atoms in Si1-xGex preferentially form Si-N bonds even at 400 °C. In the case of epitaxial Ge film, N atoms diffuse through nm-order thick Ge layer into Si0.5Ge0.5 layer on Si(100) substrate and form Si nitride even at 500 °C. Therefore, it is suggested that N diffusion in Ge layer is suppressed by the formation of Si nitride. These results open the way of atomically controlled processing for nitridation and N doping of group IV semiconductors.

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