Atomically controlled processing for group IV semiconductors

Junichi Murota, Takashi Matsuura, Masao Sakuraba

Research output: Contribution to journalConference articlepeer-review

49 Citations (Scopus)

Abstract

Atomic-order surface reaction processes on the group IV semiconductor surface are formulated based on the Langmuir-type surface adsorption and reaction scheme. In in situ doped Si1-xGex epitaxial growth on the (100) surface in an SiH4-GeH4-dopant (PH3, B2H6 or SiH3CH3)-H2 gas mixture, the deposition rate, the Ge fraction and the dopant concentration are explained quantitatively by assuming that the reactant gas adsorption/reaction depends on the surface site materials and that the dopant incorporation in the grown film is conducted by Henry's law. The self-limiting formation of 1-3 monolayers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH4, NH3, PH3, CH4 and SiH3CH3) on Si(100) and Ge(100) is also generalized based on the Langmuir-type model. The Si epitaxial growth over the phosphorus layer already formed on Si(100) by PH3 treatment is achieved. Moreover, atomic layer-by-layer etching of Si and Ge is achieved by alternate chlorine supply and irradiation of low-energy Ar+ ions, where the chlorine adsorption is described by the Langmuir-type model. Silicon nitride is also etched layer by layer via a role-share method with an argon and hydrogen mixed plasma. These results open the way to atomically controlled processing for ultra-large-scale integration.

Original languageEnglish
Pages (from-to)423-431
Number of pages9
JournalSurface and Interface Analysis
Volume34
Issue number1
DOIs
Publication statusPublished - 2002 Aug 1
EventECASIA'01 Proceedings of the 9th European Conference on Applications of Suface and Interface Analysis - Avignon, France
Duration: 2001 Sep 302001 Oct 5

Keywords

  • Atomically controlled processing
  • CVD
  • Etching
  • Group IV semiconductor
  • Langmuir
  • Self-limited reaction

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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