Atomically controlled processing for group IV semiconductors

Junichi Murota, Masao Sakuraba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Moreover, Si or Si 1-xGe x epitaxial growth over N, P or C layer already-formed on Si(100) or Si 1-xGe x(100) surface is achieved and the capability of atomically controlled processing for advanced devices is demonstrated. Additionally, the strain control of the Si 1-xGe x/Si heterostructure due to stripe patterning is discussed.

Original languageEnglish
Title of host publication2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
Pages111-120
Number of pages10
Edition1
DOIs
Publication statusPublished - 2009 Dec 1
Event2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II - Xian, China
Duration: 2009 Jul 52009 Jul 10

Publication series

NameECS Transactions
Number1
Volume22
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
CountryChina
CityXian
Period09/7/509/7/10

ASJC Scopus subject areas

  • Engineering(all)

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