Atomically controlled processing for germanium-based CVD epitaxial growth

Junichi Murota, Yuji Yamamoto, Bernd Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Introduction of Ge into ULSIs has become increasingly attractive because of the higher carrier mobility of Ge. Here, the reactions between Ge oxide and Si substrate or SiH<inf>4</inf> in order to perform high-quality Ge epitaxial growth and atomic-order surface nitridation of Ge/Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si (100) heterostructure by NH<inf>3</inf> are investigated. It is found that, by the adsorption of the Ge oxide on Si(100) surface, pure Ge and Si oxide are formed on the surface even at 400 °C, and that, by SiH<inf>4</inf> treatment at 350°C, the amount of the oxidized Ge decreases and Si oxide is formed on the Ge layer. On the nitridation of the heterostructure, it is found that N atoms diffuse through nm-order thick Ge layer into Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si(100) substrate and form Si nitride even at 500 °C. These results demonstrate the capability of CVD technology for atomically controlled processing of group IV semiconductors for ultra-large-scale integration.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages135-144
Number of pages10
Volume67
Edition1
ISBN (Print)9781607685395
DOIs
Publication statusPublished - 2015
Event2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015 - Lake Tahoe, United States
Duration: 2015 Jun 142015 Jun 18

Other

Other2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
CountryUnited States
CityLake Tahoe
Period15/6/1415/6/18

ASJC Scopus subject areas

  • Engineering(all)

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    Murota, J., Yamamoto, Y., & Tillack, B. (2015). Atomically controlled processing for germanium-based CVD epitaxial growth. In ECS Transactions (1 ed., Vol. 67, pp. 135-144). Electrochemical Society Inc.. https://doi.org/10.1149/06701.0135ecst