Atomically controlled processing for future Si-based devices

Junichi Murota, Masao Sakuraba, Shinobu Takehiro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH 4, NH3, PH3, CH4 and SiH 3CH3) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si epitaxial growth over the N and P layer already-formed on Si(100) surface is achieved. It is found that higher level of electrical P atoms exist in such film, compared with doping under thermal equilibrium conditions. These results open the way to atomically controlled technology for ultralarge-scale integrations.

Original languageEnglish
Title of host publication2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004
Subtitle of host publicationIEEE Electron Devices 2nd Northwest Regional Meeting
Pages31-34
Number of pages4
Publication statusPublished - 2004 Jul 12
Event2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting - Boise, ID, United States
Duration: 2004 Apr 162004 Apr 16

Publication series

NameIEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting

Other

Other2004 IEEE Workshop on Microelectronics and Electron Devices, WMED 2004: IEEE Electron Devices Northwest Regional Meeting
CountryUnited States
CityBoise, ID
Period04/4/1604/4/16

Keywords

  • Atomic layer doping
  • Atomically controlled processing
  • Chemical vapor deposition
  • Epitaxial growth
  • Si-based ultrasmall device

ASJC Scopus subject areas

  • Engineering(all)

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