Atomically controlled plasma processing for quantum heterointegration of group IV semiconductors

Masao Sakuraba, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For the purpose of quantum heterointegration of group IV semiconductors, atomically controlled plasma processing by utilizing an electron-cyclotron- resonance (ECR) plasma enhanced chemical vapor deposition (CVD) at low temperature has been developed to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements in the plasma processing are reviewed: (1) By N and B atomic-layer formation and Si epitaxial growth on Si(100), heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in an about 2 nm-thick region. (2) highly-strained and relaxed Ge films on Si(100) with atomic-order flatness can be epitaxially grown. (3) Using a 84% relaxed Ge buffer layer formed on Si(100), formation of a highly strained Si film with nanometer-order thickness was achieved.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages337-343
Number of pages7
Edition7
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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