Atomically controlled plasma processing for group IV quantum heterostructure formation

Masao Sakuraba, Katsutoshi Sugawara, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

By low-temperature epitaxial growth of group IV semiconductors utilizing electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (CVD), atomically controlled plasma processing has been developed in order to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, typical recent progress in plasma processing is reviewed as follows: (1) By N and B atomic-layer formation and subsequent Si epitaxial growth on Si(100) without substrate heating, heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in about a 2-nm-thick region of the atomic-layer doped Si film. (2) Using an 84 % relaxed Ge buffer layer formed on Si(100) by ECR plasma enhanced CVD, formation of a B-doped highly strained Si film with nanometer-order thickness was achieved and hole mobility enhancement as high as about 3 was observed in the highly strained Si film.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Pages98-103
Number of pages6
ISBN (Print)9783037850510
DOIs
Publication statusPublished - 2011

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Atomic-layer doping
  • B
  • Epitaxial growth
  • Ge
  • Group IV semiconductor
  • N
  • Plasma enhanced chemical vapor deposition
  • Quantum heterostructure
  • Si
  • Strain

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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